Electrical resistivity based on the changes of quantum phases applied to Al-Zn alloy, in its pre precipitation stage

Abstract

A scheme based on the quantum phase change method is proposed to find the electrical resistivity of an Al-Zn alloy, considering the participation of the different dispersing centers as these structural changes are occurring. The density of states for the different configurations was calculated using the Materials Studio software, while the alloy was simulated considering a supercell of aluminum to which solute atoms are substituted. Under this calculation scheme, the resistivity associated to the Zn clusters that are forming GP zones, showed an anomalous behavior, which agrees with the data reported in the literature. This anomaly is a consequence of the variation of the changes of quantum phases in the Fermi level, product of the appearance of crystalline forms 
or clusters that change the density of states according to the particular size of the considered clusters.